Graphene Quantum Dot-Decorated Vertically Oriented Graphene/Germanium Heterojunctions for Near-Infrared Photodetectors
Author(s): Zhu, W (Zhu, Wei); Xue, ZY (Xue, Zhongying); Wang, G (Wang, Gang); Zhao, MH (Zhao, Menghan); Chen, D (Chen, Da); Guo, QL (Guo, Qinglei); Liu, ZD (Liu, Zhiduo); Feng, XQ (Feng, Xiaoqiang); Ding, GQ (Ding, Guqiao); Chu, PK (Chu, Paul K.); Di, ZF (Di, Zengfeng)
Source: ACS APPLIED NANO MATERIALS Volume: 3 Issue: 7 Pages: 6915-6924 DOI: 10.1021/acsanm.0c01258 Published: JUL 24 2020
Abstract: Two-dimensional graphene films and graphene derivatives have attracted broad interest because of the large potential in optoelectronic applications. However, improving the performance of photodetectors based on graphene films and graphene derivatives remains a great challenge. Through replacing graphene films with vertically oriented graphene (VOG), which is subsequently functionalized with graphene quantum dots (GQDs), a functional VOG is assembled on the germanium (Ge) heterojunction (designated as GQDs/VOG/Ge) for near-infrared light detection. The properties of the photodetector are enhanced by the synergistic effects of GQDs and VOG with regard to light absorption and electron transport. Functional modification of VOG is an efficient way to adjust and control the Fermi level of VOG, increase the built-in potential of the Schottky junctions, and facilitate separation of photoinduced electron and hole pairs. The as-fabricated photodetector shows excellent responsivity (1.06 X 10(6) AW(-1)) and detectivity (2.11 X 10(14) cm Hz(1/2) W-1) at a wavelength of 1550 nm. Investigation of the photoresponse reveals response rates with microsecond rise/fall time in addition to excellent reproducibility and long-term stability. The results reveal a simple strategy to fabricate novel structures for high-performance graphene-based photodetectors.
Accession Number: WOS:000555518200077
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Chu, Paul B-5923-2013 0000-0002-5581-4883
ISSN: 2574-0970
