Author(s): Jia, CY (Jia, Chunyang); Jeon, DW (Jeon, Dae-Woo); Xu, JL (Xu, Jianlong); Yi, XY (Yi, Xiaoyan); Park, JH (Park, Ji-Hyeon); Zhang, YY (Zhang, Yiyun)

Source: NANOMATERIALS Volume: 10 Issue: 6 Article Number: 1031 DOI: 10.3390/nano10061031 Published: JUN 2020

Abstract: In this work, we have achieved synthesizing large-area high-density beta-Ga(2)O(3)nanowires on c-plane sapphire substrate by metal-organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 mu m and diameters ranging from similar to 50 to similar to 200 nm. The beta-Ga(2)O(3)nanowires consist of a single-crystal monoclinic structure, which exhibits strong (2 over bar 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these beta-Ga(2)O(3)nanowires exhibits strong emissions centered at similar to 360 and similar to 410 nm, respectively. The energy band gap of the beta-Ga(2)O(3)nanowires is estimated to be similar to 4.7 eV based on an optical transmission test. A possible mechanism for the growth of beta-Ga(2)O(3)nanowires is also presented.

Accession Number: WOS:000554934300001

PubMed ID: 32481612

eISSN: 2079-4991

Full Text: https://www.mdpi.com/2079-4991/10/6/1031