A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Chiral-Anomaly-Driven Casimir-Lifshitz Torque between Weyl Semimetals

2020-08-17

Author(s): Chen, L (Chen, Liang); Chang, K (Chang, Kai)

Source: PHYSICAL REVIEW LETTERS Volume: 125 Issue: 4 Article Number: 047402 DOI: 10.1103/PhysRevLett.125.047402 Published: JUL 24 2020

Abstract: We propose a new mechanism to generate the Casimir-Lifshitz torque between Weyl semimetals arising from the chiral anomaly. For short distances ranging from a nanometer to a few tens of nanometers, chiral anomaly is manifested via a Casimir-Lifshitz torque similar to sin(theta) with theta being the twisting angle. As the distance between Weyl semimetals increases from a submicrometer to a few micrometers, chiral-anomaly-driven Casimir-Lifshitz torque between Weyl semimetals is remarkably large, which is comparable with that of conventional birefringent materials.

Accession Number: WOS:000552227400015

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Chen, Liang                  0000-0001-6057-5867

ISSN: 0031-9007

eISSN: 1079-7114

Full Text: https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.125.047402



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明