A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth

2020-07-24

Author(s): Wan, RQ (Wan, Rongqiao); Gao, X (Gao, Xiang); Wang, LC (Wang, Liancheng); Zhang, S (Zhang, Shuo); Chen, XB (Chen, Xiongbin); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Li, JH (Li, Junhui); Zhu, WH (Zhu, Wenhui); Li, JM (Li, Jinmin)

Source: PHOTONICS RESEARCH Volume: 8 Issue: 7 Pages: 1110-1117 DOI: 10.1364/PRJ.392046 Published: JUL 1 2020

Abstract: To achieve high quality lighting and visible light communication (VLC) simultaneously, GaN based white light emitting diodes (WLEDs) oriented for lighting in VLC has attracted great interest. However, the overall bandwidth of conventional phosphor converted WLEDs is limited by the long lifetime of phosphor, the slow Stokes transfer process, the resistance-capacitance (RC) time delay, and the quantum-confined Stark effect (QCSE). Here by adopting a self-assembled InGaN quantum dots (QDs) structure, we have fabricated phosphor-free single chip WLEDs with tunable correlated color temperature (CCT, from 1600 K to 6000 K), a broadband spectrum, a moderate color rendering index (CRI) of 75, and a significantly improved modulation bandwidth (maximum of 150 MHz) at a low current density of 72 A/cm(2). The broadband spectrum and high modulation bandwidth are ascribed to the capture of carriers by different localized states of InGaN QDs with alleviative QCSE as compared to the traditional InGaN/GaN quantum well (QW) structures. We believe the approach reported in this work will find its potential application in GaN WLEDs and advance the development of semiconductor lighting-communication integration. (c) 2020 Chinese Laser Press

Accession Number: WOS:000546819500008

ISSN: 2327-9125

Full Text: https://www.osapublishing.org/prj/abstract.cfm?uri=prj-8-7-1110



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明