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Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode

2020-07-24

Author(s): Li, SL (Li, Shulun); Chen, Y (Chen, Yao); Shang, XJ (Shang, Xiangjun); Yu, Y (Yu, Ying); Yang, JW (Yang, Jiawei); Huang, JH (Huang, Junhui); Su, XB (Su, Xiangbin); Shen, JX (Shen, Jiaxin); Sun, BQ (Sun, Baoquan); Ni, HQ (Ni, Haiqiao); Su, XL (Su, Xingliang); Wang, KY (Wang, Kaiyou); Niu, ZC (Niu, Zhichuan)

Source: NANOSCALE RESEARCH LETTERS Volume: 15 Issue: 1 Article Number: 145 DOI: 10.1186/s11671-020-03358-1 Published: JUL 9 2020

Abstract: We proposed a precise calibration process of Al0.9Ga0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) intensity. Light-matter interaction of single QD in DBR micropillar cavity (Q similar to 3800) under weak coupling regime was investigated by temperature-tuned PL spectra; a pronounced enhancement (14.6-fold) of QD exciton emission was observed on resonance. The second-order autocorrelation measurement showsg((2))(0)=0.070, and the estimated net count rate before the first objective lens reaches 1.6x10(7)counts/s under continuous wave excitation, indicating highly pure single-photon emission at high count rates.

Accession Number: WOS:000546702600001

PubMed ID: 32648067

ISSN: 1931-7573

eISSN: 1556-276X

Full Text: https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-020-03358-1



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