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High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices


Author(s): Deng, GR (Deng, Gongrong); Chen, DQ (Chen, Dongqiong); Yang, SP (Yang, Shaopei); Yang, CW (Yang, Chaowei); Yuan, J (Yuan, Jun); Yang, WY (Yang, Wenyun); Zhang, YY (Zhang, Yiyun)

Source: OPTICS EXPRESS Volume: 28 Issue: 12 Pages: 17611-17619 DOI: 10.1364/OE.395770 Published: JUN 8 2020

Abstract: Improving the operation temperature of the focal plane array (FPA) imagers is critical in meeting the demands to reduce the size, weight, and power (SWaP) for mid-infrared detection systems. In this work, we report the demonstration of a 15 mu m-pitch 640x512 middle-format pBn FPA device with a 50% cutoff wavelength of 4.8 gm based on short period of InAs/InAsSb-based "Ga-free" type-II strained-layer superlattices, which achieves a high operating temperature (HOT) reaching 185 K. The pBn FPA exhibits a mean noise equivalent differential temperature (NETD) of 39.5 mK and an operability of 99.6% by using f/2.0 optics fbr a 300 K background at 150 K. The mean quantum efficiency is 57.6% without antireflection coating and dark current density is 5.39x10(-5) A/cm(2) at an operation bias of -4(X) mV, by which the mean specific detectivity(D*) is calculated as high as 4.43x10(11 )cm.Hz(1/2)/W. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000542820800041

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-12-17611


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