Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride
Author(s): Wang, Y (Wang, Ye); Meng, JH (Meng, Junhua); Tian, Y (Tian, Yan); Chen, YN (Chen, Yanan); Wang, GK (Wang, Gaokai); Yin, ZG (Yin, Zhigang); Jin, P (Jin, Peng); You, JB (You, Jingbi); Wu, JL (Wu, Jinliang); Zhang, XW (Zhang, Xingwang)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 12 Issue: 24 Pages: 27361-27367 DOI: 10.1021/acsami.0c05850 Published: JUN 17 2020
Abstract: Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA.W-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
Accession Number: WOS:000542925300058
PubMed ID: 32449615
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
You, Jingbi A-2941-2011 0000-0002-4651-9081
ISSN: 1944-8244
eISSN: 1944-8252
