Author(s): Zhang, X (Zhang, Xuan); Jia, QX (Jia, Qing-Xuan); Sun, J (Sun, Ju); Jiang, DW (Jiang, Dong-Wei); Wang, GW (Wang, Guo-Wei); Xu, YQ (Xu, Ying-Qiang); Niu, ZC (Niu, Zhi-Chuan)

Source: CHINESE PHYSICS B Volume: 29 Issue: 6 Article Number: 068501 DOI: 10.1088/1674-1056/ab8377 Published: JUN 2020

Abstract: we report nBn photodetectors based on InAs(0.91)Sb(0.09)with a 100% cut-off wavelength of 4.75 mu m at 300 K. The band of an nBn detector is similar to that of a standard pin detector, but there is special wide bandgap AlAs(0.08)Sb(0.92)barrier layer in the nBn detector, in which the depletion region of nBn detector exists. The nBn design has many advantages, such as low dark current and high quantum efficiency, because the nBn design can suppress the generation-recombination (GR) current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot ofJ(0)-1/Tindicates the absence of the generation-recombination dark current. We fabricate an nBn detector with a quantum efficiency (QE) maximum of similar to 60% under -0.2-V bias voltage. The InAsSb nBn detectors may be a competitive candidate for midwavelength infrared detector.

Accession Number: WOS:000542187200001

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab8377