A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Compact on-chip structured illumination system based on integrated optics

2020-07-10

Author(s): Wang, C (Wang Chen); Yu, YD (Yu Yu-De); Li, F (Li Fang); Li, ZY (Li Zhi-Yong)

Source: JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 39 Issue: 3 Pages: 273-278 DOI: 10.11972/j.issn.1001-9014.2020.03.001 Published: JUN 2020

Abstract: Structured illumination has been used for several decades in the field of three-dimensional (3D) shape measurement and machine vision. However, the bulky structured illumination generation system limits its potential in practical applications. In this paper, a compact design method based on the silicon-on-insulator (SUE) opto-electronic integrated chip is proposed. Compared with the traditional structured light generation methods, the chip-based illumination method is simple. stable and flexible. The beam modulation and interference are achieved by on-chip devices, which efficiently avoids external disturbance and increases the portability of system. This is the first time using only on-chip devices to control the infrared beam and generate structured light pattern. The chip can provide an illumination area of about 200*200 mu m(2) with the chip size of 0.5*0.5 mm. The illumination area and structural period are related to the design of grating couplers and the wavelength of light. Moreover, different illumination patterns can be achieved by appropriately designing the optical devices on the chip.

Accession Number: WOS:000541755700001

ISSN: 1001-9014

Full Text: http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/ch/reader/view_abstract.aspx?doi=10.11972/j.issn.1001-9014.2020.03.001



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明