Author(s): Wang, XY (Wang, Xiaoye); Bai, X (Bai, Xue); Yang, XG (Yang, Xiaoguang); Liu, XM (Liu, Xiaoming); Du, WN (Du, Wenna); Yang, T (Yang, Tao)

Source: APPLIED SURFACE SCIENCE Volume: 518 Article Number: 146174 DOI: 10.1016/j.apsusc.2020.146174 Published: JUL 15 2020

Abstract: We in detail investigated the effect of growth time on InAs nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. It is found that the axial growth of InAs NWs is nonlinear and shows different trends with different NW diameters. Thin NWs grow faster than thick NWs in length, and the radius of both thin and thick NWs have no dependence on growth time. Based on self-catalyzed growth mechanism, we established a kinetic growth process to simulate the growth of InAs NWs on Si. We analyzed some dependences, including length-time, diameter-time and length-diameter dependences. Calculations are in good agreements with experimental ones. It indicates that growth saturation and growth rates of NWs are determined by diffusion length of In adatoms, initial diameter of seed particles and the amount of adatoms per unit area.

Accession Number: WOS:000531746300003

ISSN: 0169-4332

eISSN: 1873-5584

Full Text: https://www.sciencedirect.com/science/article/pii/S0169433220309302?via%3Dihubb