Author(s): Yang, JH (Yang, Juehan); Zhou, ZQ (Zhou, Ziqi); Fang, JZ (Fang, Jingzhi); Wen, HY (Wen, Hongyu); Lou, Z (Lou, Zheng); Shen, GZ (Shen, Guozhen); Wei, ZM (Wei, Zhongming)

Source: APPLIED PHYSICS LETTERS Volume: 115 Issue: 22 Article Number: 222101 DOI: 10.1063/1.5126233 Published: NOV 25 2019

Abstract: Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn2Se4, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based on few-layer MnIn2Se4 exhibit n-type characteristics, with a high on-off ratio of up to 450 times, and exhibit a good photoresponse with an on-off ratio of 25 times. Magnetic measurements show that few-layer MnIn2Se4 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2K and a Curie temperature of similar to 7 K. This study suggests that MnIn2Se4 has potential in applications involving magnetic and optoelectronic devices. Published under license by AIP Publishing.

Accession Number: WOS:000504304100007

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: https://aip.scitation.org/doi/10.1063/1.5126233