Enhance decoding of pre-movement EEG patterns for brain-computer interfaces
The Characteristics and Locking Process of Nonlinear MEMS Gyroscopes
Evaluation of polarization field in InGaN/GaN multiple quantum well struc...
Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Op...
High-Performance Germanium Waveguide Photodetectors on Silicon*
Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface
Investigation of modulation transfer function in InGaAs photodetector sma...
Seed-mediated growth of heterostructured Cu1.94S-MS (M = Zn, Cd, Mn) and ...
High-performance phosphorene electromechanical actuators
Recent Advances of Two-Dimensional Nanomaterials for Electrochemical Capa...
官方微信
友情链接

Two-dimensional XSe2 (X = Mn, V) based magnetic tunneling junctions with high Curie temperature

2019-12-05

 

Author(s): Pan, LF (Pan, Longfei); Wen, HY (Wen, Hongyu); Huang, L (Huang, Le); Chen, L (Chen, Long); Deng, HX (Deng, Hui-Xiong); Xia, JB (Xia, Jian-Bai); Wei, ZM (Wei, Zhongming)

Source: CHINESE PHYSICS B Volume: 28 Issue: 10 Article Number: 107504 DOI: 10.1088/1674-1056/ab3e45 Published: SEP 2019

Abstract: Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe2 (X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe2 (X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.

Accession Number: WOS:000497720500004

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab3e45



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明