High-Quality Hexagonal Nonlayered CdS Nanoplatelets for Low-Threshold Whi...
Low insertion loss silicon-based spatial light modulator with high reflec...
Effect of Nanodisks at Different Positions on the Fano Resonance of Graph...
Adaptive Sample-Size Unscented Particle Filter with Partitioned Sampling ...
High-resolution and fast-response optical waveguide temperature sensor us...
Optical phase matching of high-order azimuthal WGM in a water droplet res...
Interface-driven unusual anomalous Hall effect in MnxGa/Pt bilayers
A discussion on mass resolution in secondary ion mass spectrometry
Improvement of beam quality for fiber-coupled diode-side-pumped Nd:YAG ro...
Applications of Fiber Optics Sensors in Seismology

Two-dimensional XSe2 (X = Mn, V) based magnetic tunneling junctions with high Curie temperature



Author(s): Pan, LF (Pan, Longfei); Wen, HY (Wen, Hongyu); Huang, L (Huang, Le); Chen, L (Chen, Long); Deng, HX (Deng, Hui-Xiong); Xia, JB (Xia, Jian-Bai); Wei, ZM (Wei, Zhongming)

Source: CHINESE PHYSICS B Volume: 28 Issue: 10 Article Number: 107504 DOI: 10.1088/1674-1056/ab3e45 Published: SEP 2019

Abstract: Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe2 (X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe2 (X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.

Accession Number: WOS:000497720500004

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab3e45


北京市海淀区清华东路甲35号 北京912信箱 (100083)





版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明