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Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

2019-12-05

 

Author(s): Guo, YY (Guo, Yang-Yan); Han, WH (Han, Wei-Hua); Zhao, XS (Zhao, Xiao-Song); Dou, YM (Dou, Ya-Mei); Zhang, XD (Zhang, Xiao-Di); Wu, XY (Wu, Xin-Yu); Yang, FH (Yang, Fu-Hua)

Source: CHINESE PHYSICS B Volume: 28 Issue: 10 Article Number: 107303 DOI: 10.1088/1674-1056/ab3e68 Published: SEP 2019

Abstract: We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance g(m) peak in V-g1 and valley in V-g2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V-g1 and V-g2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

Accession Number: WOS:000497719900003

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab3e68



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