Enhance decoding of pre-movement EEG patterns for brain-computer interfaces
The Characteristics and Locking Process of Nonlinear MEMS Gyroscopes
Evaluation of polarization field in InGaN/GaN multiple quantum well struc...
Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Op...
High-Performance Germanium Waveguide Photodetectors on Silicon*
Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface
Investigation of modulation transfer function in InGaAs photodetector sma...
Seed-mediated growth of heterostructured Cu1.94S-MS (M = Zn, Cd, Mn) and ...
High-performance phosphorene electromechanical actuators
Recent Advances of Two-Dimensional Nanomaterials for Electrochemical Capa...
官方微信
友情链接

Enhanced efficiency in 808 nm GaAs laser power converters via gradient doping

2019-12-05

 

Author(s): Zhao, YJ (Zhao, Yingjie); Liang, P (Liang, Peng); Ren, HX (Ren, Huixue); Han, PD (Han, Peide)

Source: AIP ADVANCES Volume: 9 Issue: 10 Article Number: 105206 DOI: 10.1063/1.5109133 Published: OCT 2019

Abstract: Two batches of GaAs laser power converters (LPCs) with or without a localized gradient doping layer were fabricated via metalorganic chemical vapor deposition for converting the power of 808 nm lasers. The gradient doping layer was introduced into the base layer above the back surface field layer with a doping concentration that varied exponentially from 1x10(18)/cm(3) to 5x10(18)/cm(3). The two batches of LPCs were tested under various 808 nm laser light intensities ranging from 100 to 2500 mW. The LPC structures with and without the gradient doping layer both displayed their highest conversion efficiency of 55.1% and 53.4%, respectively, at a laser power of 1200 mW. The addition of the gradient doping layer improved the separation efficiency of the photogenerated carriers and reduced the recombination rate in the base region of the GaAs LPCs, which increased the open-circuit voltage of the LPCs by 13.3 mV and the short-circuit current density by 3.6 mA. Furthermore, the absolute value of the fill factor increased by 1.2% at an incident light intensity of 1200 mW, resulting in a 1.7% improvement in the photoelectric conversion efficiency of the GaAs LPCs. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Accession Number: WOS:000496806000059

eISSN: 2158-3226

Full Text: https://aip.scitation.org/doi/10.1063/1.5109133



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明