Modification of spin-obit torques using the Ta oxidation buffer layer
Authors: Sheng, Y; Cao, Y; Ma, XQ; Wang, KY
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume: 481 Pages: 12-15 Published: JUL 1 2019 Language: English Document type: Article
DOI: 10.1016/j.jmmm.2019.02.057
Abstract:
We carefully investigated the influence of the thickness of TaOx buffer layer on the perpendicular magnetic anisotropy and spin-obit torques in Pt/Co/Pt trilayers. Using the first and second harmonic Hall voltage measurements, we found that both the perpendicular magnetic anisotropy field and the damping-like field are sensitive to the thickness of the TaOx layer. The damping-like torque with various TaOx thickness changes synchronously with the resistance of the device, which can be explained by the buffer TaOx, layer induced current distribution changes in the bottom and top N layers. Through the current-induced magnetization switching measurement, we found that an optimal switching efficiency can be obtained by tuning the thickness of TaOx buffer layer.
全文链接:https://www.sciencedirect.com/science/article/pii/S0304885318335455