Author(s): Shen, GY (Shen, Guiying); Zhao, YW (Zhao, Youwen); Liu, JM (Liu, Jingming); Bai, YB (Bai, Yongbiao); Dong, ZY (Dong, Zhiyuan); Xie, H (Xie, Hui); Chen, XY (Chen, Xiaoyu)
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 47 Issue: 9 Pages: 4998-5001 DOI: 10.1007/s11664-018-6228-3 Published: SEP 2018
Abstract: N-type InAs single crystals have been studied by local vibrational mode (LVM) spectroscopy, photoluminescence spectroscopy (PL), glow discharge mass spectrometry (GDMS) and Hall effect measurement, respectively. Carbon-hydrogen complex defects CH3 and CH2 are detected in as-grown and annealed samples. After annealing, CH3 dissociates and more CH2 is formed. Results of PL and Hall measurement suggest that the complex defects of CH3 act as acceptors in n-type InAs and correlate with the change of electrical compensation after annealing. The 383 meV PL peak is attributed to CH3 defects. Based on the expected energy level of CH3 in InAs, we predicted that CH3 complex defects in InAs should introduce a resonant level 32 meV above the valence band minimum.
全文链接：https://link.springer.com/article/10.1007/s11664-018-6228-3