Author(s): Guo, YA (Guo, Yanan); Yan, JC (Yan, Jianchang); Zhang, Y (Zhang, Yun); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)
Source: JOURNAL OF NANOPHOTONICS Volume: 12 Issue: 4 Article Number: 043510 DOI: 10.1117/1.JNP.12.043510 Published: OCT 2018
Abstract: AlGaN-based ultraviolet light-emitting diodes (UV LEDs) are promising next-generation UV sources for a wide variety of applications. The state-of-the-art AlGaN-based UV LEDs exhibit much lower output power and external quantum efficiency than highly commercialized GaN visible LEDs. One key issue for UV LEDs is the poor light-extraction efficiency. We have reviewed the recent progress in the light extraction approaches for AlGaN-based UV LEDs, including the highly reflective techniques, and the surface/interface modification for total internal reflection mitigating. Moreover, AlGaN-based UV LEDs in the nanoscale structures, such as nanopillar, nanorod, and nanowire structures, are also discussed. (C) 2018 Society of Photo Optical Instrumentation Engineers (SPIE)
全文链接：https://www.spiedigitallibrary.org/journals/journal-of-nanophotonics/volume-12/issue-4/043510/Enhancing-the-light-extraction-of-AlGaN-based-ultraviolet-light-emitting/10.1117/1.JNP.12.043510.full