Author(s): Liu, ST (Liu, Shuang-Tao); Yang, J (Yang, Jing); Zhao, DG (Zhao, De-Gang); Jiang, DS (Jiang, De-Sheng); Liang, F (Liang, Feng); Chen, P (Chen, Ping); Zhu, JJ (Zhu, Jian-Jun); Liu, ZS (Liu, Zong-Shun); Liu, W (Liu, Wei); Xing, Y (Xing, Yao); Peng, LY (Peng, Li-Yuan); Zhang, LQ (Zhang, Li-Qun); Wang, WJ (Wang, Wen-Jie); Li, M (Li, Mo)
Source: CHINESE PHYSICS B Volume: 27 Issue: 12 Article Number: 127803 DOI: 10.1088/1674-1056/27/12/127803 Published: DEC 2018
Abstract: In this work, we study the influence of carrier gas H-2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H-2 flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H-2 flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.
全文链接：http://cpb.iphy.ac.cn/EN/abstract/abstract73227.shtml