Author(s): Zhang, J (Zhang Jing); Lyu, HL (Lyu Hong-Liang); Ni, HQ (Ni Hai-Qiao); Niu, ZC (Niu Zhi-Chuan); Zhang, YM (Zhang Yi-Men); Zhang, YM (Zhang Yu-Ming)
Source: JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 37 Issue: 6 Pages: 679-+ DOI: 10.11972/j.issn.1001-9014.2018.06.007 Published: DEC 2018
Abstract: In order to achieve low contact resistances of InAs/AlSb heterostructures with the undoped InAs cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated. The contact resistance R-c is evaluated by using transmission-line-model (TLM) measurements. A minimum of 0.128 Omega . mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 degrees C and annealing time of 20 s. The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semi-conductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing. This study shows that the contact resistance R-c is reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.
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