Author(s): Yin, Y (Yin, Yue); Ren, F (Ren, Fang); Wang, YY (Wang, Yunyu); Liu, ZQ (Liu, Zhiqiang); Ao, JP (Ao, Jinping); Liang, M (Liang, Meng); Wei, TB (Wei, Tongbo); Yuan, GD (Yuan, Guodong); Ou, HY (Ou, Haiyan); Yan, JC (Yan, Jianchang); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)
Source: MATERIALS Volume: 11 Issue: 12 Article Number: 2464 DOI: 10.3390/ma11122464 Published: DEC 2018
Abstract: Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mAinly based on two-dimensional (2D) mAterials by plasma pretreatment or pre-doping of other hexagonal mAterials. However, it is still a huge challenge for single-crystalline thin film on 2D mAterials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D mAterials, as well as other unconventional substrates.
全文链接：https://www.mdpi.com/1996-1944/11/12/2464