Author(s): Wang, PF (Wang Pengfei); Zhu, H (Zhu Hui); Zhang, YQ (Zhang Yingqiao); Feng, SW (Feng Shiwei); Guo, CS (Guo Chunsheng); Zhang, YM (Zhang Yamin); Meng, X (Meng Xiao); Qi, Q (Qi Qiong)
Source: JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION Volume: 33 Issue: 6 Pages: 1360-1364 DOI: 10.1007/s11595-018-1975-9 Published: DEC 2018
Abstract: The (001) oriented BiFeO3 thin film was deposited on the Nb:SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
全文链接：https://link.springer.com/article/10.1007/s11595-018-1975-9