Author(s): Ma, JL (Ma, Jia-Lin); Wang, HL (Wang, Hai-Long); Zhang, XM (Zhang, Xing-Min); Yan, S (Yan, Shuai); Yan, WS (Yan, Wen-Sheng); Zhao, JH (Zhao, Jian-Hua)
Source: CHINESE PHYSICS LETTERS Volume: 36 Issue: 1 Article Number: 017501 DOI: 10.1088/0256-307X/36/1/017501 Published: DEC 2018
Abstract: Single-phase Ni-0.92 Mn-1.08 As films with strained C-1b symmetry are grown on GaAs (001) substrates. In addition, a preferred epitaxial configuration of (110)-orientated Ni0.92Mn1.08As on (001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be similar to 370 degrees C. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
全文链接：http://cpl.iphy.ac.cn/10.1088/0256-307X/36/1/017501