Authors: Liu, XQ; Zheng, J; Zhou, L; Liu, Z; Zuo, YH; Xue, CL; Cheng, BW
JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 785 Pages: 228-231 Published: MAY 15 2019 Language: English Document type: Article
DOI: 10.1016/j.jallcom.2019.01.163
Abstract:
This paper reports the synthesis of single-crystalline GePb alloy films on a Ge(100) substrate by magnetron sputter epitaxy. The as-grown GePb alloy films possess high crystalline quality and no dislocations, as revealed by X-ray diffractometry, transmission electron microscopy. The Pb composition of the GePb alloy was about 0.4% at the growth temperature of 250 degrees C and it decreased with increasing substrate temperature up to 400 degrees C. The thermal stability of the GePb alloy was studied using Raman spectra and atomic force microscopy (AFM)results, and it was observed that Pb segregated from the GePb alloy above 400 degrees C. The successful growth of single-crystal GePb lays the foundation for future GePb device fabrication. (C) 2019 Elsevier B.V. All rights reserved.
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