Single-mode semiconductor lasers fabricated by standard photolithography for direct modulation
Author(s): Ma, PJ (Ma, Pijie); Liu, AJ (Liu, Anjin); Dong, FX (Dong, Fengxin); Wang, MJ (Wang, Mingjin); Zheng, WH (Zheng, Wanhua)
Source: OPTICS EXPRESS Volume: 27 Issue: 4 Pages: 5502-5511 DOI: 10.1364/OE.27.005517 Published: FEB 18 2019
Abstract: The output characteristics, modal properties, far-field profiles, and dynamic modulation responses of semiconductor lasers with surface higher-order gratings fabricated by the standard photolithography are presented. Single-mode semiconductor lasers with 20th and 37th -order gratings for the 1.55 mu m wavelength range are realized. The single-mode semiconductor lasers with 20th -order gratings have lower threshold currents and higher slope efficiencies than those with 37th -order gratings. The surface higher-order grating placed closed to the output facet can deteriorate the vertical far-field profile of the semiconductor laser. However, the properties of the semiconductor laser's single-mode operation are not affected by the surface higher-order grating's position in the ridge waveguide. The -3 dB bandwidth of these single-mode semiconductor lasers can achieve 9 GHz at 100 mA, which is the highest, to the best of our knowledge, for such a kind of single-mode semiconductor laser with a surface higher-order grating. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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