A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Single-mode semiconductor lasers fabricated by standard photolithography for direct modulation

2019-03-20

 
Author(s): Ma, PJ (Ma, Pijie); Liu, AJ (Liu, Anjin); Dong, FX (Dong, Fengxin); Wang, MJ (Wang, Mingjin); Zheng, WH (Zheng, Wanhua)
Source: OPTICS EXPRESS Volume: 27 Issue: 4 Pages: 5502-5511 DOI: 10.1364/OE.27.005517 Published: FEB 18 2019
Abstract: The output characteristics, modal properties, far-field profiles, and dynamic modulation responses of semiconductor lasers with surface higher-order gratings fabricated by the standard photolithography are presented. Single-mode semiconductor lasers with 20th and 37th -order gratings for the 1.55 mu m wavelength range are realized. The single-mode semiconductor lasers with 20th -order gratings have lower threshold currents and higher slope efficiencies than those with 37th -order gratings. The surface higher-order grating placed closed to the output facet can deteriorate the vertical far-field profile of the semiconductor laser. However, the properties of the semiconductor laser's single-mode operation are not affected by the surface higher-order grating's position in the ridge waveguide. The -3 dB bandwidth of these single-mode semiconductor lasers can achieve 9 GHz at 100 mA, which is the highest, to the best of our knowledge, for such a kind of single-mode semiconductor laser with a surface higher-order grating. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
全文链接:https://www.osapublishing.org/oe/abstract.cfm?uri=oe-27-4-5502



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明