Author(s): Lin, L (Lin, Li); Ou, YY (Ou, Yiyu); Jokubavicius, V (Jokubavicius, Valdas); Syvajarvi, M (Syvajarvi, Mikael); Liang, M (Liang, Meng); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Schuh, P (Schuh, Philipp); Wellmann, P (Wellmann, Peter); Herstrom, B (Herstrom, Berit); Jensen, F (Jensen, Flemming); Ou, HY (Ou, Haiyan)
Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 91 Pages: 9-12 DOI: 10.1016/j.mssp.2018.10.028 Published: MAR 2019
Abstract: We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30 mA.
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