Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode
2018-12-20
Authors: Gao, W; Zheng, ZQ; Li, YT; Xia, CX; Du, J; Zhao, Y; Li, JB
JOURNAL OF MATERIALS CHEMISTRY C
Volume: 6 Issue: 46 Published: DEC 14 2018 Document type: Article
DOI: 10.1039/c8tc04459g
全文链接:https://pubs.rsc.org/en/content/articlelanding/2018/tc/c8tc04459g