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Gate-tunable and high optoelectronic performance in multilayer WSe2 P-N diode

2018-11-29

Authors: Yang, YJ; Huo, NJ; Li, JB
JOURNAL OF MATERIALS CHEMISTRY C
Volume: 6 Issue: 43 Pages: 11673-11678 Published: NOV 21 2018 Document type: Article
DOI: 10.1039/c8tc04295k
全文链接:https://pubs.rsc.org/en/content/articlelanding/2018/tc/c8tc04295k

 

 



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