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The compensation role of deep defects in the electric properties of lightly Si-doped GaN

2018-11-29

Authors: Liu, ST; Yang, J; Zhao, DG; Jiang, DS; Liang, F; Chen, P; Zhu, JJ; Liu, ZS; Liu, W; Xing, Y; Zhang, LQ; Li, M
JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 773 Pages: 1182-1186 Published: JAN 30 2019 Document type: Article
DOI: 10.1016/j.jallcom.2018.09.333
全文链接:https://www.sciencedirect.com/science/article/pii/S0925838818335916

 

 



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