High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature
2018-11-15
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature
Authors: Yao, RH; Li, XQ; Zheng, ZK; Zhang, XC; Xiong, M; Xiao, S; Ning, HL; Wang, XF; Wu, YX; Peng, JB
MATERIALS
Volume: 11 Issue: 10 Published: OCT 2018 Document type: Article
DOI: 10.3390/ma11101871
全文链接：https://www.mdpi.com/1996-1944/11/10/1871
