Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
2018-11-09
Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
Authors: Mei, SZ; Wang, Q; Hao, ML; Xu, JK; Xiao, HL; Feng, C; Jiang, LJ; Wang, XL; Liu, FQ; Xu, XG; Wang, ZG
CHINESE PHYSICS LETTERS
Volume: 35 Issue: 9 Published: SEP 2018 Document type: Article
DOI: 10.1088/0256-307X/35/9/098101
全文链接:http://cpl.iphy.ac.cn/EN/abstract/abstract71259.shtml