Influence of temperature-induced cavity length variation in wavelength mo...
Optimized fabrication of wafer-level Si waveguides based on 200 mm CMOS p...
Extraordinary Second Harmonic Generation in ReS2 Atomic Crystals
Improved gas sensing properties of silver-functionalized ZnSnO3 hollow na...
Formation mechanism of coherent rainbows
Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-...
Porous crumpled graphene with hierarchical pore structure and high surfac...
Comparative study on the photoluminescence properties of monoclinic and c...
A Novel Antibacterial Membrane Electrode Based on Bacterial Cellulose/Pol...
Modulating photoelectric performance of graphene/gallium arsenide nanowir...
官方微信
友情链接

Extended-wavelength InGaAsSb infrared unipolar barrier detectors

2018-10-18

Extended-wavelength InGaAsSb infrared unipolar barrier detectors
Authors: Hao, HY; Wang, GW; Han, X; Jiang, DW; Sun, YY; Guo, CY; Xiang, W; Xu, YQ; Niu, ZC
AIP ADVANCES
Volume: 8 Issue: 9 Published: SEP 2018 Document type: Article
DOI: 10.1063/1.5026839
全文链接:https://aip.scitation.org/doi/full/10.1063/1.5026839

 

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明