Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AIGaN buffer and SiNx interlayer
2018-10-18
Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AIGaN buffer and SiNx interlayer
Authors: Deng, GQ; Zhang, YT; Yu, Y; Huang, Z; Han, X; Chen, L; Yan, L; Li, PC; Dong, X; Zhao, DG; Du, GT
SUPERLATTICES AND MICROSTRUCTURES
Volume: 122 Pages: 74-79 Published: OCT 2018 Document type: Article
DOI: 10.1016/j.spmi.2018.08.020
全文链接:https://www.sciencedirect.com/science/article/pii/S0749603618312667