Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope
2018-10-08
Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope
Authors: Zheng, XT; Huang, W; Liang, HW; Wang, P; Liu, Y; Chen, ZY; Liang, P; Li, M; Zhang, J; Chen, YH; Wang, XQ
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 18 Issue: 11 Pages: 7468-7472 Published: NOV 2018 Document type: Article
DOI: 10.1166/jnn.2018.16086
全文链接:http://openurl.ingenta.com/content?genre=article&issn=1533-4880&volume=18&issue=11&spage=7468&epage=7472