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Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

2018-09-20

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
Authors: Liang, F; Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Zhu, JJ; Chen, P; Liu, ST; Xing, Y; Zhang, LQ; Wang, WJ; Li, M; Zhang, YT; Du, GT
AIP ADVANCES
Volume: 8 Issue: 8 Published: AUG 2018 Document type: Article
DOI: 10.1063/1.5046875
全文链接:https://aip.scitation.org/doi/full/10.1063/1.5046875

 

 



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