Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn
2018-09-20
Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn
Authors: Zhang, YW; Zheng, J; Liu, Z; Xue, CL; Li, CB; Zuo, YH; Cheng, BW; Wang, QM
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 57 Issue: 10 Published: OCT 2018 Document type: Article
DOI: 10.7567/JJAP.57.106504
全文链接:http://iopscience.iop.org/article/10.7567/JJAP.57.106504