Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
2018-09-07
Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
Authors: Yang, J; Zhao, DG; Liu, ZS; Jiang, DS; Zhu, JJ; Chen, P; Liang, F; Liu, ST; Liu, W; Xing, Y; Li, M
IEEE PHOTONICS JOURNAL
Volume: 10 Issue: 4 Published: AUG 2018 Document type: Article
DOI: 10.1109/JPHOT.2018.2859802
全文链接:https://ieeexplore.ieee.org/document/8419238/