Liu, Zhenwu; Liu, Suping; Wang, Cuiluan; Zhao, Fang; Xing, Wang; Xiong, Cong; Zhu, Lingni; Ma, Xiaoyu Source: Optics Letters, v 49, n 12, p 3448-3451, June 15, 2024; ISSN: 01469592, E-ISSN: 15394794; DOI: 10.1364/OL.524601; Publisher: Optica Publishing Group (formerly OSA)

Author affiliation:

National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China

Abstract:

High-power semiconductor lasers with stabilized wavelengths are recognized as exemplary pumping sources for solid-state lasers. This study introduces distributed feedback (DFB) laser diode arrays designed to maintain an extensive temperature locking range. We report experimentally on high-power 808 nm DFB laser diode arrays. The first-order sinusoidal grating was fabricated using nanoimprint lithography, succeeded by inductively coupled plasma (ICP) dry etching and subsequent wet polishing. These 808 nm DFB laser diode arrays have demonstrated a measured output power of 134 W under a pulsed current of 150 A, with the heat sink temperature maintained at 25°C. The slope efficiency was determined to be 1.1 W/A. At a current of 150 A, the laser operated with a narrow spectral width over a wide temperature range, extending from −30 to 90°C, with a temperature drift coefficient of 0.0595 nm/K.