Yang, Shangyu; Guo, Ning; Zhao, Siqi; Li, Yunkai; Wei, Moyu; Zhang, Yang; Liu, Xingfang

Source: Materials, v 17, n 11, June 2024; E-ISSN: 19961944; DOI: 10.3390/ma17112612; Article number: 2612; Publisher: Multidisciplinary Digital Publishing Institute (MDPI)

Author affiliation:

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China

Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing; 100083, China

Abstract:

In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer’s C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H2 etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H2 etching time of 3 min found to enhance the surface quality of the epitaxial layer.