Author(s): Cao, V (Cao, Victoria); Pan, SJ (Pan, Shujie); Wu, DY (Wu, Dingyi); Zhang, HG (Zhang, Hongguang); Tang, MC (Tang, Mingchu); Seeds, A (Seeds, Alwyn); Liu, HY (Liu, Huiyun); Xiao, X (Xiao, Xi); Chen, SM (Chen, Siming)

Source: APL PHOTONICS Volume: 9 Issue: 4  Article Number: 046110  DOI: 10.1063/5.0194677  Published Date: 2024 APR 1 

Abstract: Bi-directionally operated amplifiers enabling efficient utilization of transmission wavelengths are promising candidates in densely integrated photonic circuits for future cost-effective, power-efficient optical networks. Here, we demonstrate, for the first time, a broadband semiconductor optical amplifier (SOA) based on a novel chirped multilayered quantum dot (QD) structure, which is suitable for bi-directional amplification via the dual ground state (GS) emission spectrum. The fabricated QD SOA has achieved a maximum 3-dB gain bandwidth of 50 nm while retaining on-chip gain above 20 dB at both GS wavelengths. Under an optimum pumping current of 280 mA, the bi-directionally operated QD SOA has shown around 10 dB receiver sensitivity improvement in ultra-high-speed 100 Gbaud non-return-to-zero and 53.125 Gbaud four-level pulse amplitude modulation data transmission systems.

Accession Number: WOS:001206857000001

ISSN: 2378-0967