Liang, Dongdong; Jiang, Bei; Liu, Zhetong; Chen, Zhaolong; Gao, Yaqi; Yang, Shenyuan; He, Rui; Wang, Lulu; Ran, Junxue; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan; Sun, Jingyu; Wei, Tongbo Source: Advanced Science, 2024;

Abstract:

The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si-based integrated circuits and GaN-enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high-quality single-crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in-plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out-of-plane orientation of GaN can be guided by multi-step growth on transfer-free graphene. For the first time, the monolithic integration of light-emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS-compatible SiO2/Si(100). Remarkably, the self-powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01 × 10 A/W and 4.64 × 10 Jones, respectively. This work breaks a bottleneck of synthesizing large area single-crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si-integrated optoelectronic devices.

© 2024 The Authors. Advanced Science published by Wiley-VCH GmbH. (53 refs.)