In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D ...
Multi-Color Detection of Single Sensor Based on Tellurium Relaxation Char...
Uncooled InAsSb- based high- speed mid- wave infrared barrier detector
High Frequency Mid-Infrared Quantum Cascade Laser Integrated With Grounde...
Multi-function sensing applications based on high Q-factor multi-Fano res...
High-power electrically pumped terahertz topological laser based on a sur...
Van der Waals polarity-engineered 3D integration of 2D complementary logic
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Influence of Growth Process on Suppression of Surface Morphological Defec...
High-Power External Spatial Beam Combining of 7-Channel Quantum Cascade L...
官方微信
友情链接

High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality

2024-03-22


Author(s): Liu, JH (Liu, Junhong); Xu, YF (Xu, Yunfei); Li, RS (Li, Rusong); Zhang, JC (Zhang, Jinchuan); Zhuo, N (Zhuo, Ning); Liu, JQ (Liu, Junqi); Wang, LJ (Wang, Lijun); Cheng, FM (Cheng, Fengmin); Liu, SM (Liu, Shuman); Liu, FQ (Liu, Fengqi); Lu, QY (Lu, Quanyong); Zhai, SQ (Zhai, Shenqiang)

Source: PHOTONICSVolume: 11Issue: 2  Article Number: 150  DOI: 10.3390/photonics11020150  Published: FEB 2024

Abstract: The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality through the optimization of the absorption boundary condition and the introduction of the symmetrically distributed electrodes. Single-mode surface emission at 3.4 THz with the maximum peak output power of 50 mW is demonstrated. Meanwhile, a high symmetric far-field pattern with C6 symmetry and a small divergence angle is achieved. In this device, the integration of the stable single-mode operation, high beam quality and high output power is realized, which may have great significance for practical applications.

Accession Number: WOS:001172257000001

Author Identifiers:

AuthorWeb of Science ResearcherID     ORCID Number

liu, jun qi      0000-0003-1654-6174

Liu, Jun-Hong      0000-0003-4205-3859

eISSN: 2304-6732




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明