报告题目: Principles of simulations of an operation of modern semiconductor lasers

报告人: Professor Wlodzimierz Nakwaski(Lodz University of Technology (TUL), Poland)

时间: 2018年3月20日(星期二)上午9:30

地点: 中国科学院半导体研究所图书馆101会议室　　

Abstract: First semiconductor lasers have been designed as edge-emitting diode lasers (EELs). Later their other designs have been developed: vertical-cavity surface-emitting lasers (VCSELs), distributed-feedback lasers (DFBs), vertical-external-cavity surface-emitting lasers (VECSELs), quantum-cascade lasers (QCLs) and others. For all of them their supplying should exceed so-called threshold condition to start a laser action. Principally laser radiation should contain only one laser mode. Reasons of its multi-mode operation are discussed. From among all diode-laser designs, VCSELs seem to exhibit the best properties but their output is very low. Their operation may be somewhat enhanced with the aid of oxide apertures. An impact of aperture localizations on a VCSEL performance is discussed.

Biography: W？odzimierz Nakwaski received his Ph.D. degree from the Institute of Electron Technology, Warsaw in 1976. He has been a full Professor of Physics since 1996. His research interests include modelling of physical phenomena occurring in optoelectronics devices, in particular: i) computer simulation of an operation of various types of diode lasers and light-emitting diodes taking into consideration mutual interactions between thermal, optical, electrical, recombination and mechanical phenomena, ii) study of heat generation and spreading processes in various diode lasers and light-emitting diodes, iii) study of thermal, electrical, and optical crosstalks between individual elements of one- as well as two-dimensional arrays of diode lasers, iv) analysis of physical mechanisms of gradual and catastrophic degradations of diode lasers, v) theoretical analysis of thermal conductivity of ternary and quaternary AIIIBV semiconductor compounds, vi) design optimisation of high-power diode lasers and arrays of diode lasers, vii) modelling of radial oxidation kinetics of the AlAs layers during manufacturing of modern VCSELs, viii) simulation of an operation of possible nitride VCSELs to propose their best structure for both pulse and continuous-wave room-temperature operations, ix) optimisation of designs of nitride edge-emitting and vertical-cavity surface-emitting diode lasers, x) physics of an operation and structure designing of GaAs-based VCSELs equipped with the InGaAs/GaAs quantum-dot as well as the GaInNAs or GaInNAsSb quantum-well active regions for the second (1.3 mm) and the third (1.55 mm) generations of the optical fibre communication, xi) modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers, xii) modelling of quantum-cascade semiconductor lasers, xiii) thermal modelling of semiconductor disk lasers.