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第311期: Progress in Bonding and Epitaxial Growth for Heterogeneous Photonic Integrated Circuits

2017-10-24

报告题目: Progress in Bonding and Epitaxial Growth for Heterogeneous Photonic Integrated Circuits

报告人: Prof. John E. Bowers (Department of Electrical and Computer Engineering, University of California Santa Barbara, California, USA)

时间: 2017年10月26日(星期四) 下午14:00

地点: 中国科学院半导体研究所图书馆101会议室  

Abstract: A wide variety of III-V on silicon devices have been demonstrated using direct bonding to achieve high performance, high yield and excellent lifetimes.   Examples include a 2.54 Tbit/s network on chip, fully integrated optical gyroscopes and 100 Gbit/s optical transceivers.  A related approach is to epitaxially grow III-V quantum dot lasers on silicon.  This approach has made excellent progress, with submilliamp laser thresholds demonstrated.  Recent advances include growth on on-axis (001) Si, threading dislocation density reduction, and improvement in laser lifetimes.


Biography:John Bowers is Director of the Institute for Energy Efficiency and a professor in the Departments of Electrical and Computer Engineering and Materials at the University of California, Santa Barbara. His research interests are primarily concerned with silicon photonics, optoelectronic devices, optical switching and transparent optical networks and quantum dot lasers. Bowers received the M.S. and Ph.D. degrees from Stanford University. He worked for AT&T Bell Laboratories and Honeywell before joining UCSB.  Bowers is a fellow of the IEEE, OSA and the American Physical Society, and a recipient of the IEEE Photonics Award, OSA/IEEE Tyndall Award, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He is a member of the National Academy of Engineering and the National Academy of Inventors. 



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