报告题目: Molecular Beam Epitaxy growth of Semiconductor Nanostructures: present status and future prospects 

　　报告人: Prof. Mark Hopkinson (Department of Electronic and Electrical Engineering, University of Sheffield, UK)  

　　时间: 2016年1月19日（星期二）上午10:00    

　　地点: 中科院半导体研究所图书馆101会议室　　

　　Abstract: The talk will discuss the growth, structure and properties of self-assembled III-V semiconducting quantum dots produced by molecular beam epitaxy (MBE) growth. These quantum dot nanostructures of dimensions of in the 10nm range possess unique quantised electronic properties which can overcome some of the limitations of present-day optoelectronic devices, whilst offering new opportunities for quantum communications and computation. The talk will describe work performed on the synthesis of InGaAs quantum dots at Sheffield, including investigations of quantum dot structural properties, the electronic and optical properties of single quantum dots and quantum dot arrays and device applications in the fields of optical communications and sensing. Some of the limitations of present approaches and possible ways forward will be discussed. The talk will go on to examine future directions in MBE growth, including prospects for the integration with new materials, alternative nanostructures and methods to achieve higher degrees of ordering between individual nanostructures.

　　Biography：Mark Hopkinson is Professor of Electronic Engineering at the University of Sheffield (Sheffield, UK). He has over 25 years of experience in III-V and Si-based semiconductors including materials synthesis, physical properties and device applications. He is world expert within the field of III-V epitaxial growth by Molecular Beam Epitaxy (MBE) and has published over 650 publications in this field. The activities of his group are concerned with the development of advanced semiconductor devices, with a major focus on III-V optoelectronic devices. The group enjoys a strong reputation in this area, with many invited talks, high profile international collaborations.

　　Professor Hopkinson’s research interests lie within the themes of semiconductor nanostructures, novel epitaxial materials, electronics-photonics integration and photonics for solar energy, sensing and optical communications.