Abstract: The Diamond semiconductor is an attractive material for both next-generation power electronics due to its high electric field strength and high thermal conductivity, and for quantum sensing applications involving NV (Nitrogen-Vacancy) centers because of their unique optical and spin properties at room temperature. In this talk, I would like to introduce power junction field effect transistors (JFETs) and sensing devices by applying advanced device nano-technologies and the semiconductor band-gap engineering techniques.

　　Biography：Mutsuko HATANO received the Ph.D. degree from Keio University.

　　She joined Central Research Laboratory, Hitachi Ltd., Tokyo, Japan, and was engaged in research and development on the superconducting devices, low-power devices and mobile displays. She was a chief researcher and a head of the environment electronics project at the CRL. She was a visiting researcher at the University of California, Berkeley from 1998 to 2000.

　　In 2010, she joined Tokyo Institute of Technology as a professor of physical electronics department. Her research interests focus on developing carbon based devices for sustainable energy and environmental applications.

　　(1) Wide-gap semiconductor (SiC, Diamond) power electronics for smart grid society

　　(2) Diamond quantum sensing devices for medical / life science applications

　　(3) Artificial photosynthesis devices

　　She holds 128 patents. She is members of Science Council of Japan, a fellow of the Japan Society of Applied Physics.