报告题目: Bridging the Gap – Rediscovering Black Phosphorus as an Anisotropic Layered Material for Electronics and Optoelectronics 

　　报告人: Prof. Han Wang (University of Southern California) 

　　时间: 2015年6月4日(星期四) 上午10:00 

　　地点: 中国科学院半导体研究所3号楼320

    Abstract: In this talk, I will discuss our recent work in introducing black phosphorus (BP) to the layered-material family as a novel anisotropic 2D material for electronic and optoelectronic applications. Narrow gap BP thin film (0.3 eV in bulk) serendipitously fill the energy space between zero-gap graphene and large-gap TMDCs, making it an promising material for near and mid-infrared optoelectronics. BP thin films show high mobility above 650 cm2/V.s at room temperature along the light effective mass (x) direction, implying its promising potential for high frequency, thin-film electronics. Furthermore, its anisotropic nature within the plane of the layers may allow for the realization of conceptually new electronic and photonic devices impossible in other 2D materials. In the talk, I will also present our work in demonstrating 20 GHz black phosphorus radio-frequency transistors. I will conclude with remarks on promising future directions of black phosphorus research and how this new material is expected to benefit the next-generation electronics and photonics technologies.

　　Biography: Han Wang joined Ming Hsieh Department of Electrical Engineering at University of Southern California as an Assistant Professor in July 2014. He received the B.A. and M.Eng. degrees in electrical and information science, both with highest honors, from Cambridge University, England, in 2007 and 2008. He received his PhD degree from Massachusetts Institute of Technology in 2013. From 2013 to 2014, he is with the Nanoscale Science and Technology group at IBM T. J. Watson Research Center in Yorktown Heights, NY. His research interests include the device technology and novel circuit applications of two-dimensional (2D) materials including black phosphorus, graphene, hBN, MoS2 etc., with emphasis on exploring both the fundamental understanding and their new applications in ubiquitous electronics, mid- and far-infrared optoelectronics, energy efficient applications, and interaction with biological systems. His past research also includes GaN-based III-V HEMTs for high power millimeter-wave applications and Si power electronic devices.