[黄昆论坛]第373期:Energy Harvesting by Spin Current
[黄昆论坛]第372期:Enhancement of Light Color Conversion through Nanoscal...
[黄昆论坛]第371期: 光力学中的拓扑和非互易动力学
[黄昆论坛]第370期:Recent Advances of 2D Metal-Complex Nanosheets
[黄昆论坛]第369期:High-speed optoelectronics for underwater optical wire...
[黄昆论坛]第368期:The Development of Low Noise Avalanche Photodiodes
[黄昆论坛]第367期:氧化钛纳米棒的制备以及在染料敏化太阳电池中的应用
[黄昆论坛]第366期:Valleytronics and correlated phase probed by interlaye...
[黄昆论坛]第365期:低维纳米材料的极化激元及其增强红外光谱研究
[黄昆论坛]第364期:微纳光子的高效操控与室温量子态
官方微信
友情链接

第231期:Epitaxially Re-Grown Photonic Crystal Surface Emitting Lasers

2014-08-14

  报告题目: Epitaxially Re-Grown Photonic Crystal Surface Emitting Lasers

  报告人: Richard Hogg(Professor, University of Sheffield)

  时间: 2014年8月22日 (星期五) 上午: 10:00

  地点: 中科院半导体图书馆101会议室

  摘要: Photonic crystal surface emitting lasers (PCSELs) <1> offer the ultimate in control in semiconductor lasers. The photonic crystal causes light waves propagating in various 2D directions to be coupled with one another and a 2D standing wave (cavity mode) is constructed over a broad area. PCSELs have been shown to have high power scaling with area, high single-mode powers <2>, large scale coherent emission, control of the beam shape and polarization with design of the photonic crystal geometry <3,4>, as well as beam steering <5>. Williams et. al., demonstrated GaAs all semiconductor PCSELs based on epitaxial regrowth <6>. These all semiconductor PCSELs have been shown to give high coupling values similar to their void containing counterparts <6,7> due to a strong mode overlap of the photonic crystal with the in-plane guided mode. In this presentation I shall review the development of epitaxially regrown PCSEL’s, describing results from latest devices which demonstrate broad area coherent emission.

  报告人:Professor Richard Hogg obtained his PhD in Physics in 1995 from the University of Sheffield and then spent two years as a postdoctoral researcher at NTT Basic Research Laboratories in Atsugi, Japan. He was then awarded a EU-Japan fellowship as a visiting researcher in Professor Arakawa’s Laboratory at the University of Tokyo. He subsequently spent three years at Toshiba Research Europe’s Cambridge Laboratory developing single-photon detectors and the ultra-fast optical spectroscopy of charged excitons, before moving to Agilent Technologies Fibre-Optic Component Operation in Ipswich, UK, in 2000 where he was manager of materials characterization. In 2003 he joined the Electronic and Electrical Engineering Department of the University of Sheffield, where he is currently Professor of Semiconductor Devices, and Head of The Semiconductor Materials and Devices Group. His research group is active in developing the understanding of device physics, engineering, fabrication technologies, and applications of various semiconductor laser, amplifier, and super-luminescent diode devices. This includes quantum dot amplifiers and super-luminescent diodes for application in skin tissue imaging (optical coherence tomography), quantum cascade lasers for gas sensing, and quantum cascade amplifiers for swept lasers. His group has also been active in developing re-growth technologies for GaAs based distributed feedback lasers, self-aligned stripe lasers, and photonic crystal surface emitting lasers.



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明