第227期:Novel integrated devices based on nonlinear frequency generation
题 目: Novel integrated devices based on nonlinear frequency generation
报告人: Roberto Morandotti (INRS-EMT, Fellow of the Royal Society of Canada, Fellows of OSA and SPIE, and Full Member of SigmaXi)
时间: 2014年5月15日(星期四),下午15:00
地点: 中科院半导体研究所学术会议中心
摘要: While the demand for bandwidth is still increasing, electronics is now approaching many fundamental limitations in speed. Very likely the next generation of processors will implement optical methods to transport the signal to different part of the chip. Hence photonics materials and optical integration strategies will have to meet the current CMOS technology and platform. Ultimately a number of optical functionalities will have to be realized in an all-optical way. In particular, future time-domain multiplexed optical networks will exploit stable pulsed sources exceeding hundreds GHz repetition rates, possibly based on passive mode locked lasers. We recently demonstrated that it is possible to obtain stable, high repetition mode-locked soliton emission, by using a nonlinear high-finesse filter, thus exploiting a novel interaction mechanism that we named Filter-Driven Four Wave Mixing (FD-FWM) and which extends the DFWM operating mechanism through the use of a highly nonlinear integrated micro-ring resonators. Furthermore, this novel technology present exciting prospect towards the generation of entangled and correlated photons, opening new paradigms towards the realization of future Quantum Enabled Telecommunications Networks.
报告人简历: Roberto Morandotti received a MSc in Physics from the University of Genova in 1993 and a PhD in Electronic Engineering at the University of Glasgow (Scotland) in 1999, where his research activity focused on the study of the linear and nonlinear properties of optical discrete systems. In June 2003 he joined INRS-EMT in Montreal , where he is a Full Professor since 2008.His research interests mainly deal with the linear and nonlinear properties of periodic structures, both in III-V semiconductors and silica, as well as with optics at unusual wavelengths, with a special focus on THz.