报告题目 Title: Silicon Carbide Power Devices

报告人 Presenter: Dr. Lin Cheng, Senior Device Scientist, Team Leader Power R&D, Cree Inc., Durham, North Carolina, USA

　  时间 Time: 2013年5月24日(星期五 Friday) 上午: 10:00 AM

　  地点Location: 中科院半导体研究所学术会议中心

Abstract：Development in power semiconductors is vital for achieving the design goals set by industry. The steadily increasing demand for high-power, high-voltage, and high-temperature operation of the power conversion and modulation systems brings traditional silicon semiconductor ever closer to its fundamental material limits. With the rapid improvement of SiC material quality, SiC power electronics is attracting tremendous interest due to its superior material properties such as 3x wider bandgap, 3x higher thermal conductivity, and 10x higher critical breakdown field strength than Si. These advancements have enabled 1200 V and 1700 V, 20 A and 50 A SiC Schottky diodes and MOSFETs to meet the market demands in moderate to high power sectors for a variety of solar inverter, Electric Vehicle (EV), Fast Chargers for EV, and motor drive applications. SiC power modules rated at 1200 V, 100 A have been introduced, and 1200 V, 880 A modules have successfully passed simulated testing of 11,783 miles on a road course. The improved SiC material has also led to advancements in high voltage bipolar devices such as IGBTs and GTOs in the 10 kV to 20 kV class for advanced grid and pulse power applications. Work that remains is to improve the lifetime & its uniformity at high-current injection levels and to reduce basal plane dislocations in thick epilayers. However, the progress made to date in achieving ultra-high voltage in 1 ~ 2 cm2 single switches is a testament to the continuously improving SiC material quality at Cree.

报告人简介Short Bio of Presenter:Dr. Lin Cheng received the BS degree in Material Science from Wuhan University of Technology, Wuhan, China, in 1988 and the PhD degree in Electrical Engineering from University of Cincinnati, Cincinnati, Ohio, USA, in 2003. During her PhD study, she developed various SiCOI (SiC-On-Insulator) structures for high-temperature MEMS (micro-electro-mechanical-system) and fiber-optics applications. From 2003 to 2008, she was with SemiSouth Laboratories Inc. and Mississippi State University, Starkville, Mississippi, where her research interests were focused on design and process development & integration of SiC power JFETs and SBDs for a variety of externally and internally sponsored programs. Since 2008, she has been with Cree Inc., Durham, North Carolina, USA, where her research interests include development of various SiC high-power and high-temperature devices, such as MOSFETs, BJTs, IGBTs, GTOs, PiN diodes, and JBS diodes, with voltage ratings from 600 V to 20 kV+. Dr. Cheng has authored and coauthored over 60 technical papers and conference presentations, and holds over 20 U.S. patents, patent applications, and disclosures. Dr. Cheng is a Senior Member of the IEEE Electron Device Society and a member of the Materials Research Society.