报告题目:III-V nanostructures and devices monolithically grown on silicon substrates
时间: 2013年4月23日(星期二) 上午: 9:00
Abstract：Direct epitaxial growth of III-V nanostructures on Si substrates is one of the most promising candidates for realizing photonic devices on a Si platform. In this presentation, the growth of III-V quantum dots (semiconductor nanosized crystal) and nanowires on Si substrates and their applications in communications and solar energy will be discussed. New grown techniques have been developed for the growth of III-V buffer layers on Ge, Si and Ge/Si substrates by Molecular Beam Epitaxy (MBE), leading to high quality quantum dot laser diodes operating at technologically important telecommunications wavelengths. In the second part of the presentation, the fabrication of 1.7-eV core-shell GaAsP nanowires by the Ga-droplet assisted growth will be discussed. A record efficiency of >10% for a single core-shell GaAsP nanowire solar cell was demonstrated.
Professor Huiyun Liu received his PhD from Institute of Semiconductor, Chinese Academy of Sciences at November 2001. After receiving his PhD, he joined the EPSRC National Centre for III-V Technologies at Sheffield University. In 2007, he was awarded Royal Society University Research Fellow on developing III-V nanostructures on silicon substrates for silicon photonics, and started his academic career by taking Senior Lecturer position atUniversity College London (UCL) with commissioning the first new MBE reactor in central London. In 2012, he was promoted as Chair (As full Professor in US) of Semiconductor Photonics at UCL. His current research interest concentrates on the nanometre-scale engineering of low-dimensional semiconductor structures (such as quantum dots, nanowires, and quantum wells) by using MBE and the development of novel optoelectronic devices including lasers, detectors, solar cells, and modulators. He co-authored more than 120 peer-reviewed journal papers and hold on several patents on silicon photonics.
